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| 150W, 50V, 150MHz N-CHANNEL RF POWER VERTICAL MOSFET PRELIMINARY INFORMATION VRF150 BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features * * * * * * * 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V 150W WITH 18dB MIN GAIN @ 30MHz, 50V EXCELLENT STABILITY & LOW IMD COMMON SOURCE CONFIGURATION 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS NITRIDE PASSIVATED REFRACTORY GOLD METALLIZATION DESCRIPTION: The VRF150 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and intermodulation distortion. 1. DRAIN 2. SOURCE 3. GATE 4. SOURCE ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol V(BR)DSS VDGO VGS ID PDISS TJ T STG Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Power Dissipation Max Operating Junction Temperature Storage Temperature Value 125 125 40 16 300 +200 -65 to +150 Unit V V V A W C C Thermal Data Re(J-C) Thermal Resistance Junction-Case 0.6 C/W VRF150.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PRELIMINARY INFORMATION VRF150 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 C) 25 Symbol Off Characteristics: V(BR)DSS VGS = 0V IDSS VGS = 0V IGSS VGS = 20V On Characteristics: VGS(Q) VDS = 10V VDS(ON) VGS = 10V GFS VDS = 10V Dynamic Characteristics: CISS VGS = 0V COSS VGS = 0V CRSS VGS = 0V Test Conditions IDS = 100mA VDS = 50V VDS = 0V ID = 250mA ID = 10A ID = 250mA VDS = 50V VDS = 50V VDS = 50V f = 1 MHz f = 1 MHz f = 1 MHz Min. 125 ----1.0 1.0 5.0 ------- Value Typ. ------3.0 2.0 --480 230 40 Max. --5.0 1.0 5.0 5.0 --------- Unit V mA A V V mho pF pF pF FUNCTIONAL TESTS Symbol POUT GPS GPS D IMD(d3) Load Mismatch Test Conditions f = 150MHz VDD = 50V IDQ = 250mA f = 150MHz VDD = 50V POUT = 150WPEP IDQ = 250mA f = 30MHz f = 150MHz f1 = 30MHz VDD = 50V f = 30MHz VDD = 50V POUT = 150WPEP IDQ = 250mA VDD = 50V POUT = 150WPEP IDQ = 250mA f2=30.001MHz POUT = 150WPEP IDQ = 250mA VDD = 50V POUT = 150WPEP VDQ = 250mA 30:1 VSWR - All Phase Angles Min. 150 --------- Value Typ. 10 18 50 -32 Max. ----------- Unit W dB dB % dBc No degradation in Output Power VRF150.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PRELIMINARY INFORMATION VRF150 TEST CIRCUIT INFORMATION 151 VRF150.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PRELIMINARY INFORMATION Power Out vs. Power In VRF150 Vdd = 50V, Idq = 250mA, Freq = 175 MHz 160.00 140.00 120.00 Pout (W) 100.00 80.00 60.00 40.00 20.00 0.00 0.00 2.00 4.00 6.00 8.00 Pin (W) 10.00 12.00 14.00 16.00 Gain vs. Power Out Vdd = 50V, Idq = 250mA, Freq = 175 MHz 12.0 11.5 11.0 Gain (dB) 10.5 10.0 9.5 9.0 8.5 8.0 0.00 20.00 40.00 60.00 80.00 Pout (W) 100.00 120.00 140.00 160.00 VRF150.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PRELIMINARY INFORMATION VRF150 PACKAGE MECHANICAL DATA VRF150.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
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